MPN

Vishay TrenchFET Gen IV Type N-Channel MOSFET, 11 A, 45 V Enhancement, 4-Pin SO-8

RS stock no.:: 200-6843
Mfr. Part No.:: SIJ150DP-T1-GE3
Manufacturer:: Vishay

Vishay TrenchFET Gen IV Type N-Channel MOSFET, 11 A, 45 V Enhancement, 4-Pin SO-8

Image representative of range

Bulk discount available

Subtotal (1 pack of 25 units)*

R 472,225

(exc. VAT)

R 543,05

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

Shipping from 20 August 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
25 - 75	R 18.889	R 472.23
100 - 475	R 18.416	R 460.40
500 - 975	R 17.864	R 446.60
1000 - 1475	R 17.15	R 428.75
1500 +	R 16.464	R 411.60

*price indicative

RS stock no.:: 200-6843
Mfr. Part No.:: SIJ150DP-T1-GE3
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	11A
	Maximum Drain Source Voltage Vds	45V
	Package Type	SO-8
	Series	TrenchFET Gen IV
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	4.1mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.1V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	70nC
	Maximum Power Dissipation Pd	65.7W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Length	3.4mm
	Height	3.4mm
	Width	0.98 mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 11A
	Maximum Drain Source Voltage Vds 45V
	Package Type SO-8
	Series TrenchFET Gen IV
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 4.1mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.1V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 70nC
	Maximum Power Dissipation Pd 65.7W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Length 3.4mm
	Height 3.4mm
	Width 0.98 mm
	Standards/Approvals No
	Automotive Standard No

Document- SIJ150DP-T1-GE3

The Vishay SIJ150DP-T1-GE3 is a N-channel 45V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low Qg and Qoss reduce power loss and improve efficiency

Flexible leads provide resilience to mechanical stress

100 % Rg and UIS tested

Qgd/Qgs ratio < 1 optimizes switching characteristics

Vishay TrenchFET Gen IV Type N-Channel MOSFET, 11 A, 45 V Enhancement, 4-Pin SO-8

FREE delivery for orders over R 1,500.00

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