Vishay TrenchFET Gen IV Type N-Channel MOSFET, 108 A, 45 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 pack of 50 units)*

R 729,90

(exc. VAT)

R 839,40

(inc. VAT)

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Units
Per unit
Per Pack*
50 - 50R 14.598R 729.90
100 - 450R 14.233R 711.65
500 - 950R 13.806R 690.30
1000 - 1450R 13.253R 662.65
1500 +R 12.723R 636.15

*price indicative

RS stock no.:
200-6847
Mfr. Part No.:
SISS50DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

108A

Maximum Drain Source Voltage Vds

45V

Package Type

PowerPAK 1212

Series

TrenchFET Gen IV

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.1mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

65.7W

Typical Gate Charge Qg @ Vgs

70nC

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

3.3mm

Length

3.3mm

Standards/Approvals

No

Automotive Standard

No

The Vishay SISS50DN-T1-GE3 is a N-channel 45V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low RDS(on) in a compact and thermally enhanced package

Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss

100 % Rg and UIS tested

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