Vishay TrenchFET Gen IV Type P-Channel MOSFET, 18.3 A, 30 V Enhancement, 8-Pin SO-8

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Subtotal (1 pack of 50 units)*

R 592,20

(exc. VAT)

R 681,05

(inc. VAT)

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Units
Per unit
Per Pack*
50 - 50R 11.844R 592.20
100 - 450R 11.548R 577.40
500 - 950R 11.201R 560.05
1000 - 1450R 10.753R 537.65
1500 +R 10.323R 516.15

*price indicative

RS stock no.:
200-6797
Mfr. Part No.:
Si4425FDY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

18.3A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET Gen IV

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

16mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

16 V

Typical Gate Charge Qg @ Vgs

41nC

Maximum Power Dissipation Pd

4.8W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay Si4425FDY-T1-GE3 is a P-channel 30V (D-S) MOSFET.

TrenchFET Gen IV p-channel power MOSFET

100% Rg tested

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