Vishay TrenchFET Gen IV Type N-Channel MOSFET, 92.5 A, 60 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 pack of 25 units)*

R 525,90

(exc. VAT)

R 604,775

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 75R 21.036R 525.90
100 - 475R 20.51R 512.75
500 - 975R 19.894R 497.35
1000 - 1475R 19.099R 477.48
1500 +R 18.335R 458.38

*price indicative

RS stock no.:
200-6855
Mfr. Part No.:
SiSS22LDN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

92.5A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK 1212

Series

TrenchFET Gen IV

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.1mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

65.7W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

56nC

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

3.3mm

Height

3.3mm

Width

3.3 mm

Standards/Approvals

No

Automotive Standard

No

The Vishay SiSS22LDN-T1-GE3 is a N-channel 60V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

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