Vishay TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SIRA90DP-T1-RE3

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Subtotal (1 pack of 5 units)*

R 136,14

(exc. VAT)

R 156,56

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 195R 27.228R 136.14
200 - 395R 26.548R 132.74
400 - 745R 25.752R 128.76
750 +R 24.722R 123.61

*price indicative

Packaging Options:
RS stock no.:
134-9698
Mfr. Part No.:
SIRA90DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

104W

Typical Gate Charge Qg @ Vgs

102nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.25mm

Height

1.12mm

Width

5.26 mm

Automotive Standard

No

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