Vishay TrenchFET Type N-Channel MOSFET, 100 A, 80 V Enhancement, 8-Pin SO-8 SIR680DP-T1-RE3

Image representative of range

Bulk discount available

Subtotal (1 pack of 2 units)*

R 72,71

(exc. VAT)

R 83,616

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 5,990 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 198R 36.355R 72.71
200 - 398R 35.445R 70.89
400 - 798R 34.38R 68.76
800 +R 33.005R 66.01

*price indicative

Packaging Options:
RS stock no.:
134-9727
Mfr. Part No.:
SIR680DP-T1-RE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

80V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

104W

Typical Gate Charge Qg @ Vgs

69.5nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Width

5.26 mm

Standards/Approvals

No

Height

1.12mm

Length

6.25mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links