Vishay TrenchFET Type N-Channel MOSFET, 126 A, 100 V Enhancement, 8-Pin SO-8 SiR510DP-T1-RE3

Image representative of range

Bulk discount available

Subtotal (1 pack of 5 units)*

R 247,56

(exc. VAT)

R 284,695

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 2,260 unit(s) shipping from 11 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Pack*
5 - 45R 49.512R 247.56
50 - 95R 48.274R 241.37
100 - 245R 46.826R 234.13
250 - 995R 44.952R 224.76
1000 +R 43.154R 215.77

*price indicative

Packaging Options:
RS stock no.:
228-2904
Mfr. Part No.:
SiR510DP-T1-RE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

126A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.6mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

104W

Typical Gate Charge Qg @ Vgs

54nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 100 V MOSFET.

100 % Rg and UIS tested

Related links