Vishay TrenchFET Type N-Channel MOSFET, 126 A, 100 V Enhancement, 8-Pin SO-8 SiR510DP-T1-RE3

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Subtotal (1 pack of 5 units)*

R 234,42

(exc. VAT)

R 269,585

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45R 46.884R 234.42
50 - 95R 45.712R 228.56
100 - 245R 44.34R 221.70
250 - 995R 42.566R 212.83
1000 +R 40.864R 204.32

*price indicative

Packaging Options:
RS stock no.:
228-2904
Mfr. Part No.:
SiR510DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

126A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.6mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

54nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 100 V MOSFET.

100 % Rg and UIS tested

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