Vishay TrenchFET Type N-Channel MOSFET, 23.5 A, 100 V Enhancement, 8-Pin SO-8 Si7454FDP-T1-RE3

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Subtotal (1 pack of 10 units)*

R 158,00

(exc. VAT)

R 181,70

(inc. VAT)

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Last RS stock
  • Final 2,370 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
10 - 40R 15.80R 158.00
50 - 90R 15.405R 154.05
100 - 240R 14.943R 149.43
250 - 990R 14.345R 143.45
1000 +R 13.771R 137.71

*price indicative

Packaging Options:
RS stock no.:
228-2829
Mfr. Part No.:
Si7454FDP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

23.5A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

29.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

39W

Typical Gate Charge Qg @ Vgs

17.4nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.12mm

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-Channel power MOSFET is use for DC/DC primary side switch, Telecom / server, Motor drive control and Synchronous rectification.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

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