Vishay TrenchFET Type N-Channel MOSFET, 23.5 A, 100 V Enhancement, 8-Pin SO-8 Si7454FDP-T1-RE3

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Subtotal (1 pack of 10 units)*

R 163,71

(exc. VAT)

R 188,27

(inc. VAT)

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Last RS stock
  • Final 2,370 unit(s), ready to ship from another location

Units
Per unit
Per Pack*
10 - 40R 16.371R 163.71
50 - 90R 15.962R 159.62
100 - 240R 15.483R 154.83
250 - 990R 14.864R 148.64
1000 +R 14.269R 142.69

*price indicative

Packaging Options:
RS stock no.:
228-2829
Mfr. Part No.:
Si7454FDP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

23.5A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

29.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

39W

Typical Gate Charge Qg @ Vgs

17.4nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.12mm

Automotive Standard

No

The Vishay TrenchFET N-Channel power MOSFET is use for DC/DC primary side switch, Telecom / server, Motor drive control and Synchronous rectification.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

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