Vishay TrenchFET Type N-Channel MOSFET, 51.4 A, 100 V Enhancement, 8-Pin SO-8 SiR876BDP-T1-RE3

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Subtotal (1 pack of 10 units)*

R 252,20

(exc. VAT)

R 290,00

(inc. VAT)

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Last RS stock
  • Final 18,710 unit(s), ready to ship from another location

Units
Per unit
Per Pack*
10 - 40R 25.22R 252.20
50 - 90R 24.59R 245.90
100 - 240R 23.852R 238.52
250 - 990R 22.898R 228.98
1000 +R 21.982R 219.82

*price indicative

Packaging Options:
RS stock no.:
228-2912
Mfr. Part No.:
SiR876BDP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

51.4A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

10.8mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

42.7nC

Maximum Power Dissipation Pd

71.4W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 100 V MOSFET.

100 % Rg and UIS tested

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