Dual N-Channel MOSFET, 51.4 A, 100 V, 8-Pin PowerPAK SO-8 Vishay SiR876BDP-T1-RE3
- RS stock no.:
- 228-2912
- Mfr. Part No.:
- SiR876BDP-T1-RE3
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)**
R 78 58
(exc. VAT)
R 90 37
(inc. VAT)
21720 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Pack** |
|---|---|---|
| 10 - 40 | R 7,858 | R 78,58 |
| 50 - 90 | R 7,662 | R 76,62 |
| 100 - 240 | R 7,432 | R 74,32 |
| 250 - 990 | R 7,135 | R 71,35 |
| 1000 + | R 6,85 | R 68,50 |
**price indicative
- RS stock no.:
- 228-2912
- Mfr. Part No.:
- SiR876BDP-T1-RE3
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 51.4 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | TrenchFET | |
| Package Type | PowerPAK SO-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.0108 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.4V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Manufacturer Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 51.4 A | ||
Maximum Drain Source Voltage 100 V | ||
Series TrenchFET | ||
Package Type PowerPAK SO-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.0108 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.4V | ||
Transistor Material Si | ||
Number of Elements per Chip 2 | ||
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