Vishay TrenchFET Type N-Channel MOSFET, 146 A, 80 V Enhancement, 8-Pin SO-8 SiR580DP-T1-RE3

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Subtotal (1 pack of 5 units)*

R 208,71

(exc. VAT)

R 240,015

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45R 41.742R 208.71
50 - 95R 40.698R 203.49
100 - 245R 39.478R 197.39
250 - 995R 37.898R 189.49
1000 +R 36.382R 181.91

*price indicative

Packaging Options:
RS stock no.:
228-2908
Mfr. Part No.:
SiR580DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

146A

Maximum Drain Source Voltage Vds

80V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.7mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

50.6nC

Maximum Power Dissipation Pd

104W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 80 V MOSFET.

100 % Rg and UIS tested

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