Vishay TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

R 38 646,00

(exc. VAT)

R 44 442,00

(inc. VAT)

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  • 3,000 unit(s) ready to ship from another location
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Units
Per unit
Per Reel*
3000 - 3000R 12.882R 38,646.00
6000 - 6000R 12.56R 37,680.00
9000 +R 12.183R 36,549.00

*price indicative

RS stock no.:
134-9165
Mfr. Part No.:
SIRA90DP-T1-RE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

104W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

102nC

Maximum Operating Temperature

150°C

Height

1.12mm

Length

6.25mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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