Vishay TrenchFET Type N-Channel MOSFET, 65 A, 100 V Enhancement, 8-Pin SO-8 SIR668DP-T1-RE3

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Subtotal (1 pack of 2 units)*

R 54,80

(exc. VAT)

R 63,02

(inc. VAT)

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  • 7,358 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 198R 27.40R 54.80
200 - 398R 26.715R 53.43
400 - 798R 25.915R 51.83
800 +R 24.88R 49.76

*price indicative

Packaging Options:
RS stock no.:
134-9725
Mfr. Part No.:
SIR668DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.05mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

104W

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

72nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.12mm

Length

6.25mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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