Vishay TrenchFET Type N-Channel MOSFET, 65 A, 100 V Enhancement, 8-Pin SO-8 SIR668DP-T1-RE3

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Subtotal (1 pack of 2 units)*

R 54,59

(exc. VAT)

R 62,778

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 198R 27.295R 54.59
200 - 398R 26.615R 53.23
400 - 798R 25.815R 51.63
800 +R 24.78R 49.56

*price indicative

Packaging Options:
RS stock no.:
134-9725
Mfr. Part No.:
SIR668DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.05mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

72nC

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

104W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.12mm

Length

6.25mm

Width

5.26 mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


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