N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB Infineon IRFB4110PBF

RS stock no.:: 124-8963
Mfr. Part No.:: IRFB4110PBF
Manufacturer:: Infineon

N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB Infineon IRFB4110PBF

5176 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Not Available for premium delivery

Price (Excl VAT) Each (In a Tube of 50)

R 65,774

(exc. VAT)

R 75,64

(inc. VAT)

Units	Per unit	Per Tube*
50 - 50	R 65,774	R 3 288,70
100 - 200	R 64,13	R 3 206,50
250 - 450	R 62,206	R 3 110,30
500 - 950	R 59,718	R 2 985,90
1000 +	R 57,329	R 2 866,45

*price indicative

RS stock no.:: 124-8963
Mfr. Part No.:: IRFB4110PBF
Manufacturer:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	180 A
Maximum Drain Source Voltage	100 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	370 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	10.66mm
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Width	4.82mm
Typical Gate Charge @ Vgs	150 nC @ 10 V
Height	9.02mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB Infineon IRFB4110PBF

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