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Infineon IHW30N65R6XKSA1, Type N-Channel Reverse Conducting IGBT, 65 A 650 V, 3-Pin TO-247, Through Hole

RS stock no.:: 225-0572
Mfr. Part No.:: IHW30N65R6XKSA1
Manufacturer:: Infineon

Infineon IHW30N65R6XKSA1, Type N-Channel Reverse Conducting IGBT, 65 A 650 V, 3-Pin TO-247, Through Hole

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Bulk discount available

Subtotal (1 pack of 5 units)*

R 246,24

(exc. VAT)

R 283,175

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

135 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 5	R 49.248	R 246.24
10 - 95	R 48.016	R 240.08
100 - 245	R 46.576	R 232.88
250 - 495	R 44.712	R 223.56
500 +	R 42.924	R 214.62

*price indicative

RS stock no.:: 225-0572
Mfr. Part No.:: IHW30N65R6XKSA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	Reverse Conducting IGBT
	Maximum Continuous Collector Current Ic	65A
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	160W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Minimum Operating Temperature	-55°C
	Maximum Gate Emitter Voltage VGEO	±30 V
	Maximum Collector Emitter Saturation Voltage VceSAT	1.6V
	Maximum Operating Temperature	175°C
	Series	IHW30N65R6
	Standards/Approvals	JEDEC47/20/22
	Height	5.3mm
	Width	16.3 mm
	Length	41.9mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type Reverse Conducting IGBT
	Maximum Continuous Collector Current Ic 65A
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 160W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Minimum Operating Temperature -55°C
	Maximum Gate Emitter Voltage VGEO ±30 V
	Maximum Collector Emitter Saturation Voltage VceSAT 1.6V
	Maximum Operating Temperature 175°C
	Series IHW30N65R6
	Standards/Approvals JEDEC47/20/22
	Height 5.3mm
	Width 16.3 mm
	Length 41.9mm
	Automotive Standard No

Datasheet-IHW30N65R6XKSA1

The Infineon IHW30N65R6 is the 650 V, 30 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.

High ruggedness and stable temperature behaviour

Low EMI

Pb-free lead plating, RoHS compliant

Powerful monolithic reverse-conducting diode with low forward voltage

Infineon IHW30N65R6XKSA1, Type N-Channel Reverse Conducting IGBT, 65 A 650 V, 3-Pin TO-247, Through Hole

FREE delivery for orders over R 1,500.00

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