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Infineon IHW30N65R6XKSA1 IGBT, 65 A 650 V, 3-Pin PG-TO247-3

RS stock no.:: 225-0572
Mfr. Part No.:: IHW30N65R6XKSA1
Manufacturer:: Infineon

Infineon IHW30N65R6XKSA1 IGBT, 65 A 650 V, 3-Pin PG-TO247-3

Bulk discount available

Subtotal (1 pack of 5 units)*

R 264,55

(exc. VAT)

R 304,25

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

135 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 5	R 52.91	R 264.55
10 - 95	R 51.588	R 257.94
100 - 245	R 50.04	R 250.20
250 - 495	R 48.038	R 240.19
500 +	R 46.116	R 230.58

*price indicative

RS stock no.:: 225-0572
Mfr. Part No.:: IHW30N65R6XKSA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current	65 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±30V
	Maximum Power Dissipation	160 W
	Package Type	PG-TO247-3
	Pin Count	3

	Select all
	Brand Infineon
	Maximum Continuous Collector Current 65 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±30V
	Maximum Power Dissipation 160 W
	Package Type PG-TO247-3
	Pin Count 3

Datasheet-IHW30N65R6XKSA1

The Infineon IHW30N65R6 is the 650 V, 30 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.

High ruggedness and stable temperature behaviour
Low EMI
Pb-free lead plating, RoHS compliant
Powerful monolithic reverse-conducting diode with low forward voltage

Infineon IHW30N65R6XKSA1 IGBT, 65 A 650 V, 3-Pin PG-TO247-3

FREE delivery for orders over R 1,500.00

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