Infineon IKW75N65EH5XKSA1 IGBT, 90 A 650 V, 3-Pin PG-TO247-3
- RS stock no.:
- 215-6674
- Mfr. Part No.:
- IKW75N65EH5XKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
R 2 347,11
(exc. VAT)
R 2 699,19
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 60 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 60 | R 78.237 | R 2,347.11 |
| 90 - 120 | R 76.281 | R 2,288.43 |
| 150 + | R 73.993 | R 2,219.79 |
*price indicative
- RS stock no.:
- 215-6674
- Mfr. Part No.:
- IKW75N65EH5XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 90 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20 V, ±30 V | |
| Maximum Power Dissipation | 395 W | |
| Package Type | PG-TO247-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 90 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20 V, ±30 V | ||
Maximum Power Dissipation 395 W | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
The Infineon insulated-gate bipolar transistor with high speed H5 technology.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Related links
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