Infineon IKW75N65EH5XKSA1 IGBT, 90 A 650 V, 3-Pin PG-TO247-3

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Subtotal (1 tube of 30 units)*

R 2 283,51

(exc. VAT)

R 2 626,05

(inc. VAT)

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Orders below R 1 500,00 (exc. VAT) cost R 120,00.
In Stock
  • 30 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
30 - 60R 76.117R 2,283.51
90 - 120R 74.214R 2,226.42
150 +R 71.988R 2,159.64

*price indicative

RS stock no.:
215-6674
Mfr. Part No.:
IKW75N65EH5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

90 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20 V, ±30 V

Maximum Power Dissipation

395 W

Package Type

PG-TO247-3

Pin Count

3

The Infineon insulated-gate bipolar transistor with high speed H5 technology.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

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