Infineon AIGW40N65H5XKSA1 IGBT, 74 A 650 V, 3-Pin PG-TO247-3
- RS stock no.:
- 215-6609
- Mfr. Part No.:
- AIGW40N65H5XKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
R 113,22
(exc. VAT)
R 130,20
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 172 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 56.61 | R 113.22 |
| 10 - 98 | R 55.195 | R 110.39 |
| 100 - 248 | R 53.54 | R 107.08 |
| 250 - 498 | R 51.40 | R 102.80 |
| 500 + | R 49.345 | R 98.69 |
*price indicative
- RS stock no.:
- 215-6609
- Mfr. Part No.:
- AIGW40N65H5XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 74 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20 V, ±30 V | |
| Maximum Power Dissipation | 250 W | |
| Package Type | PG-TO247-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 74 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20 V, ±30 V | ||
Maximum Power Dissipation 250 W | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
The Infineon high speed H5 technology insulated-gate bipolar transistor offering best-in-class efficiency in hard switching and resonant topologies.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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