Infineon IHW40N65R6XKSA1, Type N-Channel IGBT, 83 A 650 V, 3-Pin PG-TO-247, Surface

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Subtotal (1 pack of 5 units)*

R 267,32

(exc. VAT)

R 307,42

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 53.464R 267.32
10 - 95R 52.128R 260.64
100 - 245R 50.564R 252.82
250 - 495R 48.542R 242.71
500 +R 46.60R 233.00

*price indicative

Packaging Options:
RS stock no.:
225-0574
Mfr. Part No.:
IHW40N65R6XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

83A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

210W

Package Type

PG-TO-247

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.6V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Height

5.3mm

Length

16.3mm

Series

TrenchStop

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IHW40N65R6 is the 650 V, 40 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.

Frequency range 20-75 kHz

Low EMI

Very tight parameter distribution

Maximum operating TJ of 175 °C

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