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Infineon IHW40N65R6XKSA1, Type N-Channel IGBT, 83 A 650 V, 3-Pin PG-TO-247, Surface

RS stock no.:: 225-0574
Mfr. Part No.:: IHW40N65R6XKSA1
Manufacturer:: Infineon

Infineon IHW40N65R6XKSA1, Type N-Channel IGBT, 83 A 650 V, 3-Pin PG-TO-247, Surface

Image representative of range

Bulk discount available

Subtotal (1 pack of 5 units)*

R 264,06

(exc. VAT)

R 303,67

(inc. VAT)

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Units	Per unit	Per Pack*
5 - 5	R 52.812	R 264.06
10 - 95	R 51.492	R 257.46
100 - 245	R 49.948	R 249.74
250 - 495	R 47.95	R 239.75
500 +	R 46.032	R 230.16

*price indicative

RS stock no.:: 225-0574
Mfr. Part No.:: IHW40N65R6XKSA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	83A
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	210W
	Package Type	PG-TO-247
	Mount Type	Surface
	Channel Type	Type N
	Pin Count	3
	Maximum Collector Emitter Saturation Voltage VceSAT	1.6V
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Series	TrenchStop
	Width	21.5 mm
	Height	5.3mm
	Length	16.3mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type IGBT
	Maximum Continuous Collector Current Ic 83A
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 210W
	Package Type PG-TO-247
	Mount Type Surface
	Channel Type Type N
	Pin Count 3
	Maximum Collector Emitter Saturation Voltage VceSAT 1.6V
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Series TrenchStop
	Width 21.5 mm
	Height 5.3mm
	Length 16.3mm
	Automotive Standard No

Datasheet-IHW40N65R6XKSA1

The Infineon IHW40N65R6 is the 650 V, 40 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.

Frequency range 20-75 kHz

Low EMI

Very tight parameter distribution

Maximum operating TJ of 175 °C

Infineon IHW40N65R6XKSA1, Type N-Channel IGBT, 83 A 650 V, 3-Pin PG-TO-247, Surface

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