Infineon IHW30N65R6XKSA1 IGBT, 65 A 650 V, 3-Pin PG-TO247-3

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Subtotal (1 tube of 240 units)*

R 6 224,88

(exc. VAT)

R 7 158,72

(inc. VAT)

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Units
Per unit
Per Tube*
240 - 480R 25.937R 6,224.88
720 - 960R 25.288R 6,069.12
1200 +R 24.53R 5,887.20

*price indicative

RS stock no.:
225-0571
Mfr. Part No.:
IHW30N65R6XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

65 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

160 W

Package Type

PG-TO247-3

Pin Count

3

The Infineon IHW30N65R6 is the 650 V, 30 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.

High ruggedness and stable temperature behaviour
Low EMI
Pb-free lead plating, RoHS compliant
Powerful monolithic reverse-conducting diode with low forward voltage

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