Infineon, Type N-Channel Reverse Conducting IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

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Bulk discount available

Subtotal (1 tube of 30 units)*

R 1 197,36

(exc. VAT)

R 1 376,97

(inc. VAT)

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  • Shipping from 28 July 2026
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Units
Per unit
Per Tube*
30 - 60R 39.912R 1,197.36
90 - 120R 38.915R 1,167.45
150 +R 37.747R 1,132.41

*price indicative

RS stock no.:
215-6645
Mfr. Part No.:
IHW50N65R5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

80A

Product Type

Reverse Conducting IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

282W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.35V

Maximum Operating Temperature

175°C

Series

Resonant Switching

Standards/Approvals

Pb-free lead plating, RoHS, JESD-022

Automotive Standard

No

The Infineon reverse conducting insulated-gate bipolar transistor with monolithic body diode.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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