Infineon, Type N-Channel IGBT, 85 A 650 V, 3-Pin TO-247, Through Hole

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Bulk discount available

Subtotal (1 tube of 30 units)*

R 1 098,15

(exc. VAT)

R 1 262,88

(inc. VAT)

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  • 180 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
30 - 60R 36.605R 1,098.15
90 - 120R 35.69R 1,070.70
150 +R 34.62R 1,038.60

*price indicative

RS stock no.:
215-6633
Mfr. Part No.:
IGW30N65L5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

85A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

227W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.5V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Series

LowVCE(sat) Fifth Generation

Standards/Approvals

Pb-free lead plating, RoHS, JEDEC

Automotive Standard

No

The Infineon fifth generation insulated-gate bipolar transistor with low saturation voltage.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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