Infineon IKW30N65H5XKSA1 IGBT, 55 A 650 V, 3-Pin PG-TO247-3

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Subtotal (1 pack of 5 units)*

R 382,94

(exc. VAT)

R 440,38

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 76.588R 382.94
10 - 95R 74.674R 373.37
100 - 245R 72.434R 362.17
250 - 495R 69.536R 347.68
500 +R 66.754R 333.77

*price indicative

Packaging Options:
RS stock no.:
215-6673
Mfr. Part No.:
IKW30N65H5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

55 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20 V, ±30 V

Maximum Power Dissipation

188 W

Package Type

PG-TO247-3

Pin Count

3

The Infineon 650v duopack insulated-gate bipolar transistor is a diode of fifth generation high speed switching series.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

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