Infineon IKW75N65EH5XKSA1, Type N-Channel IGBT, 90 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 2 units)*

R 205,44

(exc. VAT)

R 236,26

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 102.72R 205.44
10 - 98R 100.15R 200.30
100 - 248R 97.145R 194.29
250 - 498R 93.26R 186.52
500 +R 89.53R 179.06

*price indicative

Packaging Options:
RS stock no.:
215-6675
Mfr. Part No.:
IKW75N65EH5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

90A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

395W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±30 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Maximum Operating Temperature

175°C

Length

41.42mm

Standards/Approvals

JEDEC

Series

High Speed Fifth Generation

Automotive Standard

No

The Infineon insulated-gate bipolar transistor with high speed H5 technology.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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