Infineon IKW30N65H5XKSA1 IGBT, 55 A 650 V, 3-Pin PG-TO247-3

Bulk discount available

Subtotal (1 tube of 30 units)*

R 1 839,45

(exc. VAT)

R 2 115,36

(inc. VAT)

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Units
Per unit
Per Tube*
30 - 60R 61.315R 1,839.45
90 - 120R 59.782R 1,793.46
150 +R 57.989R 1,739.67

*price indicative

RS stock no.:
215-6671
Mfr. Part No.:
IKW30N65H5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

55 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20 V, ±30 V

Maximum Power Dissipation

188 W

Package Type

PG-TO247-3

Pin Count

3

The Infineon 650v duopack insulated-gate bipolar transistor is a diode of fifth generation high speed switching series.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

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