Infineon, Type N-Channel IGBT, 55 A 650 V, 3-Pin TO-247, Through Hole

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Bulk discount available

Subtotal (1 tube of 30 units)*

R 1 078,11

(exc. VAT)

R 1 239,84

(inc. VAT)

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  • 30 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
30 - 60R 35.937R 1,078.11
90 - 120R 35.038R 1,051.14
150 +R 33.987R 1,019.61

*price indicative

RS stock no.:
215-6671
Mfr. Part No.:
IKW30N65H5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

55A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

188W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

±30 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Maximum Operating Temperature

175°C

Length

42mm

Height

5.21mm

Series

High Speed Fifth Generation

Standards/Approvals

JEDEC

Automotive Standard

No

The Infineon 650v duopack insulated-gate bipolar transistor is a diode of fifth generation high speed switching series.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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