Infineon IHW50N65R5XKSA1 IGBT, 80 A 650 V, 3-Pin PG-TO247-3

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Subtotal (1 pack of 2 units)*

R 128,47

(exc. VAT)

R 147,74

(inc. VAT)

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Orders below R 1 500,00 (exc. VAT) cost R 120,00.
In Stock
  • 2 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8R 64.235R 128.47
10 - 98R 62.63R 125.26
100 - 248R 60.75R 121.50
250 - 498R 58.32R 116.64
500 +R 55.985R 111.97

*price indicative

Packaging Options:
RS stock no.:
215-6646
Mfr. Part No.:
IHW50N65R5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

282 W

Package Type

PG-TO247-3

Pin Count

3

The Infineon reverse conducting insulated-gate bipolar transistor with monolithic body diode.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

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