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Infineon IHW50N65R5XKSA1 IGBT, 80 A 650 V, 3-Pin PG-TO247-3

RS stock no.:: 215-6646
Mfr. Part No.:: IHW50N65R5XKSA1
Manufacturer:: Infineon

Infineon IHW50N65R5XKSA1 IGBT, 80 A 650 V, 3-Pin PG-TO247-3

Bulk discount available

Subtotal (1 pack of 2 units)*

R 132,06

(exc. VAT)

R 151,86

(inc. VAT)

FREE delivery for orders over R 1,500.00

Limited stock

2 left, ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 8	R 66.03	R 132.06
10 - 98	R 64.38	R 128.76
100 - 248	R 62.45	R 124.90
250 - 498	R 59.95	R 119.90
500 +	R 57.55	R 115.10

*price indicative

RS stock no.:: 215-6646
Mfr. Part No.:: IHW50N65R5XKSA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current	80 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	282 W
	Package Type	PG-TO247-3
	Pin Count	3

	Select all
	Brand Infineon
	Maximum Continuous Collector Current 80 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 282 W
	Package Type PG-TO247-3
	Pin Count 3

Datasheet-IHW50N65R5XKSA1

The Infineon reverse conducting insulated-gate bipolar transistor with monolithic body diode.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

Infineon IHW50N65R5XKSA1 IGBT, 80 A 650 V, 3-Pin PG-TO247-3

FREE delivery for orders over R 1,500.00

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