Infineon IKW50N65EH5XKSA1 Single IGBT, 80 A 650 V, 3-Pin PG-TO247

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Subtotal (1 tube of 30 units)*

R 2 120,34

(exc. VAT)

R 2 438,40

(inc. VAT)

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30 +R 70.678R 2,120.34

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RS stock no.:
226-6116
Mfr. Part No.:
IKW50N65EH5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Maximum Power Dissipation

275 W

Number of Transistors

1

Configuration

Single

Package Type

PG-TO247

Channel Type

N

Pin Count

3

The Infineon IKW50N65EH5 is 650 V high speed hard switching IGBT which used co-packed with rapid si-diode technology. It has higher power density design and has low COES/EOSS.

Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200mV reduction in VCEsat

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