Infineon AIKW50N65RF5XKSA1 IGBT, 80 A 650 V, 3-Pin PG-TO247-3

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Subtotal (1 tube of 240 units)*

R 24 788,40

(exc. VAT)

R 28 506,72

(inc. VAT)

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In Stock
  • 480 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
240 - 240R 103.285R 24,788.40
480 - 480R 100.703R 24,168.72
720 +R 97.682R 23,443.68

*price indicative

RS stock no.:
228-6508
Mfr. Part No.:
AIKW50N65RF5XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20.0V

Maximum Power Dissipation

250 W

Package Type

PG-TO247-3

Pin Count

3

Transistor Configuration

Single

The Infineon AIKW50N65RF5 is hybrid power discrete with SiC power technology with best cost-performance is the most important aspect for auxiliary applications in electric vehicles and hybrid vehicles. The hybrid of 650V TRENCHSTOP 5 AUTO fast switching IGBT and CoolSiC Schottky diode to enable a cost efficient performance boost for fast switching automotive applications such as on board charger, PFC, DC-DC and DC-AC.

Trenchstop 5 fast switching IGBT
Best in class efficiency in hard switching and resonant topologies
Low gate charge QG
Maximum junction temperature 175°C

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