MPN

DiodesZetex Full Bridge 4 Type P, Type N-Channel Power MOSFET, 3.1 A, 30 V Enhancement, 8-Pin

RS stock no.:: 922-8594
Mfr. Part No.:: ZXMHC3A01T8TA
Manufacturer:: DiodesZetex

DiodesZetex Full Bridge 4 Type P, Type N-Channel Power MOSFET, 3.1 A, 30 V Enhancement, 8-Pin

Image representative of range

Bulk discount available

Subtotal (1 reel of 1000 units)*

R 17 770,00

(exc. VAT)

R 20 440,00

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

Shipping from 20 April 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
1000 - 1000	R 17.77	R 17,770.00
2000 - 3000	R 17.325	R 17,325.00
4000 - 9000	R 16.806	R 16,806.00
10000 +	R 16.133	R 16,133.00

*price indicative

RS stock no.:: 922-8594
Mfr. Part No.:: ZXMHC3A01T8TA
Manufacturer:: DiodesZetex

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Channel Type	Type P, Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	3.1A
	Maximum Drain Source Voltage Vds	30V
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	330mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	3.9nC
	Minimum Operating Temperature	150°C
	Forward Voltage Vf	0.95V
	Maximum Power Dissipation Pd	1.7W
	Maximum Gate Source Voltage Vgs	20 V
	Transistor Configuration	Full Bridge
	Maximum Operating Temperature	-55°C
	Length	6.7mm
	Standards/Approvals	MIL-STD-202, UL 94V-0, RoHS, AEC-Q101, J-STD-020
	Width	3.7 mm
	Height	1.6mm
	Number of Elements per Chip	4
	Automotive Standard	No

	Select all
	Brand DiodesZetex
	Channel Type Type P, Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 3.1A
	Maximum Drain Source Voltage Vds 30V
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 330mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 3.9nC
	Minimum Operating Temperature 150°C
	Forward Voltage Vf 0.95V
	Maximum Power Dissipation Pd 1.7W
	Maximum Gate Source Voltage Vgs 20 V
	Transistor Configuration Full Bridge
	Maximum Operating Temperature -55°C
	Length 6.7mm
	Standards/Approvals MIL-STD-202, UL 94V-0, RoHS, AEC-Q101, J-STD-020
	Width 3.7 mm
	Height 1.6mm
	Number of Elements per Chip 4
	Automotive Standard No

COO (Country of Origin):: DE

DiodesZetex Full Bridge 4 Type P, Type N-Channel Power MOSFET, 3.1 A, 30 V Enhancement, 8-Pin

FREE delivery for orders over R 1,500.00

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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