DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin
- RS stock no.:
- 922-7888
- Mfr. Part No.:
- ZXMHC6A07T8TA
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 reel of 1000 units)*
R 19 425,00
(exc. VAT)
R 22 339,00
(inc. VAT)
Add 1000 units to get free delivery
In Stock
- Plus 1,000 unit(s) shipping from 16 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | R 19.425 | R 19,425.00 |
| 2000 - 3000 | R 18.94 | R 18,940.00 |
| 4000 - 9000 | R 18.371 | R 18,371.00 |
| 10000 + | R 17.637 | R 17,637.00 |
*price indicative
- RS stock no.:
- 922-7888
- Mfr. Part No.:
- ZXMHC6A07T8TA
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N, Type P | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 425mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.85V | |
| Maximum Power Dissipation Pd | 1.7W | |
| Typical Gate Charge Qg @ Vgs | 3.2nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Transistor Configuration | Full Bridge | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | J-STD-020, RoHS, AEC-Q101, MIL-STD-202, UL 94V-0 | |
| Height | 1.6mm | |
| Width | 3.7 mm | |
| Length | 6.7mm | |
| Number of Elements per Chip | 4 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N, Type P | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 425mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.85V | ||
Maximum Power Dissipation Pd 1.7W | ||
Typical Gate Charge Qg @ Vgs 3.2nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Transistor Configuration Full Bridge | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals J-STD-020, RoHS, AEC-Q101, MIL-STD-202, UL 94V-0 | ||
Height 1.6mm | ||
Width 3.7 mm | ||
Length 6.7mm | ||
Number of Elements per Chip 4 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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