MPN

DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin

RS stock no.:: 922-7888
Mfr. Part No.:: ZXMHC6A07T8TA
Manufacturer:: DiodesZetex

DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin

Image representative of range

Bulk discount available

Subtotal (1 reel of 1000 units)*

R 19 975,00

(exc. VAT)

R 22 971,00

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

1,000 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
1000 - 1000	R 19.975	R 19,975.00
2000 - 3000	R 19.476	R 19,476.00
4000 - 9000	R 18.891	R 18,891.00
10000 +	R 18.136	R 18,136.00

*price indicative

RS stock no.:: 922-7888
Mfr. Part No.:: ZXMHC6A07T8TA
Manufacturer:: DiodesZetex

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Channel Type	Type N, Type P
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	1.8A
	Maximum Drain Source Voltage Vds	60V
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	425mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.7W
	Forward Voltage Vf	0.85V
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	150°C
	Typical Gate Charge Qg @ Vgs	3.2nC
	Maximum Operating Temperature	-55°C
	Transistor Configuration	Full Bridge
	Width	3.7 mm
	Height	1.6mm
	Standards/Approvals	J-STD-020, RoHS, AEC-Q101, MIL-STD-202, UL 94V-0
	Length	6.7mm
	Number of Elements per Chip	4
	Automotive Standard	No

	Select all
	Brand DiodesZetex
	Channel Type Type N, Type P
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 1.8A
	Maximum Drain Source Voltage Vds 60V
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 425mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.7W
	Forward Voltage Vf 0.85V
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature 150°C
	Typical Gate Charge Qg @ Vgs 3.2nC
	Maximum Operating Temperature -55°C
	Transistor Configuration Full Bridge
	Width 3.7 mm
	Height 1.6mm
	Standards/Approvals J-STD-020, RoHS, AEC-Q101, MIL-STD-202, UL 94V-0
	Length 6.7mm
	Number of Elements per Chip 4
	Automotive Standard No

COO (Country of Origin):: DE

DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin

FREE delivery for orders over R 1,500.00

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Related links