DiodesZetex Quad 4 Type P, Type N-Channel MOSFET, 100 V Enhancement, 8-Pin SOT-223 ZXMHC10A07T8TA
- RS stock no.:
- 246-7626
- Mfr. Part No.:
- ZXMHC10A07T8TA
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 181,26
(exc. VAT)
R 208,45
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 36.252 | R 181.26 |
| 50 - 95 | R 35.346 | R 176.73 |
| 100 - 245 | R 34.286 | R 171.43 |
| 250 - 495 | R 32.914 | R 164.57 |
| 500 + | R 31.598 | R 157.99 |
*price indicative
- RS stock no.:
- 246-7626
- Mfr. Part No.:
- ZXMHC10A07T8TA
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.45Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 10.4W | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Forward Voltage Vf | 0.95V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Quad | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 4 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.45Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 10.4W | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Forward Voltage Vf 0.95V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Quad | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 4 | ||
Automotive Standard No | ||
The DiodesZetex makes a new generation complementary MOSFET H-Bridge, that features low on-resistance achievable with low gate drive. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SM-8 packaging. It offers fast switching and low input capacitance. It has working temperature range of -55°C to +150°C.
Maximum drain to source voltage is 100 V and maximum gate to source voltage is ±20 V 2 N-channel and 2 P-channels in a SOIC package It offers low on-resistance
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