DiodesZetex Full Bridge 4 Type P, Type N-Channel Power MOSFET, 4.98 A, 30 V Enhancement, 8-Pin SOIC
- RS stock no.:
- 122-1424
- Mfr. Part No.:
- ZXMHC3F381N8TC
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 reel of 2500 units)*
R 24 065,00
(exc. VAT)
R 27 675,00
(inc. VAT)
Add 2500 units to get free delivery
In Stock
- Plus 22,500 unit(s) shipping from 16 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | R 9.626 | R 24,065.00 |
| 5000 - 5000 | R 9.385 | R 23,462.50 |
| 7500 + | R 9.104 | R 22,760.00 |
*price indicative
- RS stock no.:
- 122-1424
- Mfr. Part No.:
- ZXMHC3F381N8TC
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P, Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 4.98A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.35W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Forward Voltage Vf | 0.82V | |
| Transistor Configuration | Full Bridge | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | RoHS, UL 94V-0, AEC-Q101, MIL-STD-202, J-STD-020 | |
| Width | 4 mm | |
| Length | 5mm | |
| Height | 1.5mm | |
| Number of Elements per Chip | 4 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P, Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 4.98A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.35W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Forward Voltage Vf 0.82V | ||
Transistor Configuration Full Bridge | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals RoHS, UL 94V-0, AEC-Q101, MIL-STD-202, J-STD-020 | ||
Width 4 mm | ||
Length 5mm | ||
Height 1.5mm | ||
Number of Elements per Chip 4 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Related links
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