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DiodesZetex Full Bridge 4 Type P, Type N-Channel MOSFET, 7.8 A, 30 V Enhancement, 8-Pin SOIC DMHC3025LSD-13

RS stock no.:: 823-3211
Mfr. Part No.:: DMHC3025LSD-13
Manufacturer:: DiodesZetex

DiodesZetex Full Bridge 4 Type P, Type N-Channel MOSFET, 7.8 A, 30 V Enhancement, 8-Pin SOIC DMHC3025LSD-13

Image representative of range

Bulk discount available

Subtotal (1 pack of 10 units)*

R 98,06

(exc. VAT)

R 112,77

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

300 unit(s) ready to ship from another location
Plus 24,060 unit(s) shipping from 08 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 - 40	R 9.806	R 98.06
50 - 240	R 9.561	R 95.61
250 - 1240	R 9.274	R 92.74
1250 - 2490	R 8.903	R 89.03
2500 +	R 8.547	R 85.47

*price indicative

RS stock no.:: 823-3211
Mfr. Part No.:: DMHC3025LSD-13
Manufacturer:: DiodesZetex

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Channel Type	Type P, Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	7.8A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	80mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	5.4nC
	Maximum Power Dissipation Pd	1.5W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	150°C
	Forward Voltage Vf	0.7V
	Transistor Configuration	Full Bridge
	Maximum Operating Temperature	-55°C
	Standards/Approvals	UL 94V-0, MIL-STD-202, RoHS, AEC-Q101, J-STD-020
	Length	4.95mm
	Height	1.5mm
	Width	3.95 mm
	Number of Elements per Chip	4
	Automotive Standard	AEC-Q101

	Select all
	Brand DiodesZetex
	Channel Type Type P, Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 7.8A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 80mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 5.4nC
	Maximum Power Dissipation Pd 1.5W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature 150°C
	Forward Voltage Vf 0.7V
	Transistor Configuration Full Bridge
	Maximum Operating Temperature -55°C
	Standards/Approvals UL 94V-0, MIL-STD-202, RoHS, AEC-Q101, J-STD-020
	Length 4.95mm
	Height 1.5mm
	Width 3.95 mm
	Number of Elements per Chip 4
	Automotive Standard AEC-Q101

DiodesZetex Full Bridge 4 Type P, Type N-Channel MOSFET, 7.8 A, 30 V Enhancement, 8-Pin SOIC DMHC3025LSD-13

FREE delivery for orders over R 1,500.00

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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