MPN

DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin ZXMHC6A07T8TA

RS stock no.:: 669-7461
Mfr. Part No.:: ZXMHC6A07T8TA
Manufacturer:: DiodesZetex

DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin ZXMHC6A07T8TA

Image representative of range

Bulk discount available

Subtotal (1 pack of 2 units)*

R 55,11

(exc. VAT)

R 63,376

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

1,900 unit(s) shipping from 12 March 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 8	R 27.555	R 55.11
10 - 38	R 26.865	R 53.73
40 - 98	R 26.06	R 52.12
100 - 198	R 25.02	R 50.04
200 +	R 24.02	R 48.04

*price indicative

RS stock no.:: 669-7461
Mfr. Part No.:: ZXMHC6A07T8TA
Manufacturer:: DiodesZetex

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Product Type	Power MOSFET
	Channel Type	Type N, Type P
	Maximum Continuous Drain Current Id	1.8A
	Maximum Drain Source Voltage Vds	60V
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	425mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.85V
	Maximum Power Dissipation Pd	1.7W
	Typical Gate Charge Qg @ Vgs	3.2nC
	Minimum Operating Temperature	150°C
	Maximum Gate Source Voltage Vgs	20 V
	Transistor Configuration	Full Bridge
	Maximum Operating Temperature	-55°C
	Width	3.7 mm
	Height	1.6mm
	Standards/Approvals	J-STD-020, RoHS, AEC-Q101, MIL-STD-202, UL 94V-0
	Length	6.7mm
	Number of Elements per Chip	4
	Automotive Standard	No

	Select all
	Brand DiodesZetex
	Product Type Power MOSFET
	Channel Type Type N, Type P
	Maximum Continuous Drain Current Id 1.8A
	Maximum Drain Source Voltage Vds 60V
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 425mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.85V
	Maximum Power Dissipation Pd 1.7W
	Typical Gate Charge Qg @ Vgs 3.2nC
	Minimum Operating Temperature 150°C
	Maximum Gate Source Voltage Vgs 20 V
	Transistor Configuration Full Bridge
	Maximum Operating Temperature -55°C
	Width 3.7 mm
	Height 1.6mm
	Standards/Approvals J-STD-020, RoHS, AEC-Q101, MIL-STD-202, UL 94V-0
	Length 6.7mm
	Number of Elements per Chip 4
	Automotive Standard No

COO (Country of Origin):: DE

DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET, 1.8 A, 60 V Enhancement, 8-Pin ZXMHC6A07T8TA

FREE delivery for orders over R 1,500.00

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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