Dual P-Channel MOSFET, 6.5 A, 40 V, 8-Pin SOIC Vishay SI4909DY-T1-GE3

RS stock no.:: 165-6282
Mfr. Part No.:: SI4909DY-T1-GE3
Manufacturer:: Vishay

Dual P-Channel MOSFET, 6.5 A, 40 V, 8-Pin SOIC Vishay SI4909DY-T1-GE3

Image representative of range

Price Each (On a Reel of 2500)**

R 7,941

(exc. VAT)

R 9,132

(inc. VAT)

Usually in stock

FREE delivery for orders over R 1500

Not Available for premium delivery

Units	Per unit	Per Reel**
2500 +	R 7,941	R 19 852,50

**price indicative

RS stock no.:: 165-6282
Mfr. Part No.:: SI4909DY-T1-GE3
Manufacturer:: Vishay

Si4909DY, Dual P-Channel 40V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	6.5 A
Maximum Drain Source Voltage	40 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	34 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	3.2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Width	4mm
Typical Gate Charge @ Vgs	41.5 nC @ 10 V
Transistor Material	Si
Length	5mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Minimum Operating Temperature	-55 °C
Height	1.55mm

Dual P-Channel MOSFET, 6.5 A, 40 V, 8-Pin SOIC Vishay SI4909DY-T1-GE3

FREE delivery for orders over R 1500

Dual P-Channel MOSFET, Vishay Semiconductor

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