Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 4 A, 20 V Enhancement, 8-Pin SOIC

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Subtotal (1 reel of 2500 units)*

R 10 745,00

(exc. VAT)

R 12 357,50

(inc. VAT)

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Orders below R 1 500,00 (exc. VAT) cost R 120,00.
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Units
Per unit
Per Reel*
2500 +R 4.298R 10,745.00

*price indicative

RS stock no.:
165-2751
Mfr. Part No.:
SI9933CDY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

20V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

58mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

2W

Typical Gate Charge Qg @ Vgs

17nC

Transistor Configuration

Isolated

Standards/Approvals

No

Length

5mm

Width

4 mm

Height

1.55mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

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