Login / Register to access your benefits
Recently searched

    Dual P-Channel MOSFET, 1.1 A, 20 V, 6-Pin SOT-363 Vishay SI1967DH-T1-GE3

    Image representative of range

    View all MOSFETs
    Bulk discount available

    Subtotal (1 tape of 50 units)**

    R  313 70

    (exc. VAT)

    R  360 75

    (inc. VAT)

    Add to Basket
    Select or type quantity
    1650 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Not Available for premium delivery
    Units
    Per unit
    Per Tape**
    50 - 250R 6,274R 313,70
    300 - 550R 6,117R 305,85
    600 - 1450R 5,934R 296,70
    1500 - 2950R 5,696R 284,80
    3000 +R 5,468R 273,40

    **price indicative

    Packaging Options:
    RS stock no.:
    812-3108
    Mfr. Part No.:
    SI1967DH-T1-GE3
    Manufacturer:
    Vishay
    Find similar products by selecting one or more attributes.
    Select all

    Manufacturer

    Vishay

    Channel Type

    P

    Maximum Continuous Drain Current

    1.1 A

    Maximum Drain Source Voltage

    20 V

    Package Type

    SOT-363

    Mounting Type

    Surface Mount

    Pin Count

    6

    Maximum Drain Source Resistance

    790 mΩ

    Channel Mode

    Enhancement

    Minimum Gate Threshold Voltage

    0.4V

    Maximum Power Dissipation

    1.25 W

    Transistor Configuration

    Isolated

    Maximum Gate Source Voltage

    -8 V, +8 V

    Maximum Operating Temperature

    +150 °C

    Length

    2.2mm

    Typical Gate Charge @ Vgs

    2.6 nC @ 8 V

    Transistor Material

    Si

    Number of Elements per Chip

    2

    Width

    1.35mm

    Height

    1mm

    Minimum Operating Temperature

    -55 °C

    Related links