Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 1.1 A, 20 V Enhancement, 6-Pin SC-88 SI1967DH-T1-GE3

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Subtotal (1 tape of 50 units)*

R 255,75

(exc. VAT)

R 294,10

(inc. VAT)

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Limited stock
  • Plus 400 left, shipping from 05 January 2026
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Units
Per unit
Per Tape*
50 - 250R 5.115R 255.75
300 - 550R 4.988R 249.40
600 - 1450R 4.838R 241.90
1500 - 2950R 4.644R 232.20
3000 +R 4.459R 222.95

*price indicative

Packaging Options:
RS stock no.:
812-3108
Mfr. Part No.:
SI1967DH-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

1.1A

Maximum Drain Source Voltage Vds

20V

Package Type

SC-88

Series

TrenchFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

790mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

2.6nC

Maximum Gate Source Voltage Vgs

8 V

Maximum Power Dissipation Pd

1.25W

Minimum Operating Temperature

150°C

Transistor Configuration

Isolated

Maximum Operating Temperature

-55°C

Length

2.2mm

Standards/Approvals

No

Width

1.35 mm

Height

1mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

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