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Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 1.3 A, 20 V Enhancement, 6-Pin SC-88 SI1922EDH-T1-GE3

RS stock no.:: 812-3091
Mfr. Part No.:: SI1922EDH-T1-GE3
Manufacturer:: Vishay

Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 1.3 A, 20 V Enhancement, 6-Pin SC-88 SI1922EDH-T1-GE3

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Bulk discount available

Subtotal (1 pack of 50 units)*

R 291,10

(exc. VAT)

R 334,75

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

Plus 3,000 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
50 - 250	R 5.822	R 291.10
300 - 550	R 5.677	R 283.85
600 - 1450	R 5.506	R 275.30
1500 - 2950	R 5.286	R 264.30
3000 +	R 5.075	R 253.75

*price indicative

RS stock no.:: 812-3091
Mfr. Part No.:: SI1922EDH-T1-GE3
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	1.3A
	Maximum Drain Source Voltage Vds	20V
	Series	TrenchFET
	Package Type	SC-88
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	263mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	150°C
	Typical Gate Charge Qg @ Vgs	1.6nC
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Power Dissipation Pd	1.25W
	Transistor Configuration	Isolated
	Maximum Operating Temperature	-55°C
	Length	2.2mm
	Standards/Approvals	No
	Width	1.35 mm
	Height	1mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 1.3A
	Maximum Drain Source Voltage Vds 20V
	Series TrenchFET
	Package Type SC-88
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 263mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature 150°C
	Typical Gate Charge Qg @ Vgs 1.6nC
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Power Dissipation Pd 1.25W
	Transistor Configuration Isolated
	Maximum Operating Temperature -55°C
	Length 2.2mm
	Standards/Approvals No
	Width 1.35 mm
	Height 1mm
	Number of Elements per Chip 2
	Automotive Standard No

Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 1.3 A, 20 V Enhancement, 6-Pin SC-88 SI1922EDH-T1-GE3

FREE delivery for orders over R 1,500.00

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