Vishay SiA462DJ Type N-Channel MOSFET, 12 A, 30 V Enhancement, 6-Pin SOT-363 SIA462DJ-T1-GE3
- RS stock no.:
- 814-1222
- Mfr. Part No.:
- SIA462DJ-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 50 units)*
R 335,75
(exc. VAT)
R 386,10
(inc. VAT)
FREE delivery for orders over R 1,500.00
Being discontinued
- Final 2,550 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 250 | R 6.715 | R 335.75 |
| 300 - 550 | R 6.547 | R 327.35 |
| 600 - 1450 | R 6.351 | R 317.55 |
| 1500 - 2950 | R 6.097 | R 304.85 |
| 3000 + | R 5.853 | R 292.65 |
*price indicative
- RS stock no.:
- 814-1222
- Mfr. Part No.:
- SIA462DJ-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SiA462DJ | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.018Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 19W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.15mm | |
| Height | 0.8mm | |
| Width | 2.15 mm | |
| Standards/Approvals | Lead (Pb)-Free | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SiA462DJ | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.018Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 19W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 2.15mm | ||
Height 0.8mm | ||
Width 2.15 mm | ||
Standards/Approvals Lead (Pb)-Free | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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