Infineon BSD N-Channel MOSFET, 1.4 A, 30 V Enhancement, 6-Pin SOT-363

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Subtotal (1 reel of 3000 units)*

R 3 819,00

(exc. VAT)

R 4 392,00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 - 3000R 1.273R 3,819.00
6000 - 6000R 1.241R 3,723.00
9000 +R 1.204R 3,612.00

*price indicative

RS stock no.:
258-0698
Mfr. Part No.:
BSD316SNH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

1.4A

Maximum Drain Source Voltage Vds

30V

Series

BSD

Package Type

SOT-363

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

160mΩ

Channel Mode

Enhancement

Forward Voltage Vf

800mV

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

0.6nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

0.5W

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 61249-2-21, RoHS

Height

900μm

Length

2mm

Width

1.25mm

Automotive Standard

AEC-Q101

The Infineon N-channel small signal MOSFET automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.

Enhancement mode

Logic level

Avalanche rated

Fast switching

Dv/dt rated

Low RDS(on) provides higher efficiency and extends battery life

Small packages save PCB space

Best-in-class quality and reliability

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