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Vishay TrenchFET Type P-Channel MOSFET, 0.52 A, 150 V Enhancement, 6-Pin SOT-363 SI1411DH-T1-GE3

RS stock no.:: 180-7915
Mfr. Part No.:: SI1411DH-T1-GE3
Manufacturer:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 0.52 A, 150 V Enhancement, 6-Pin SOT-363 SI1411DH-T1-GE3

Image representative of range

Bulk discount available

Subtotal (1 pack of 20 units)*

R 160,80

(exc. VAT)

R 185,00

(inc. VAT)

FREE delivery for orders over R 1,500.00

Last RS stock

Final 5,740 unit(s), ready to ship from another location

Units	Per unit	Per Pack*
20 - 20	R 8.04	R 160.80
40 - 80	R 7.839	R 156.78
100 - 480	R 7.604	R 152.08
500 - 980	R 7.30	R 146.00
1000 +	R 7.008	R 140.16

*price indicative

RS stock no.:: 180-7915
Mfr. Part No.:: SI1411DH-T1-GE3
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	0.52A
	Maximum Drain Source Voltage Vds	150V
	Series	TrenchFET
	Package Type	SOT-363
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	2.6Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.1V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	1W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	4.2nC
	Maximum Operating Temperature	150°C
	Length	2.2mm
	Standards/Approvals	No
	Height	1.1mm
	Width	2.4 mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 0.52A
	Maximum Drain Source Voltage Vds 150V
	Series TrenchFET
	Package Type SOT-363
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 2.6Ω
	Channel Mode Enhancement
	Forward Voltage Vf -1.1V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 1W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 4.2nC
	Maximum Operating Temperature 150°C
	Length 2.2mm
	Standards/Approvals No
	Height 1.1mm
	Width 2.4 mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

The Vishay Siliconix SI1411DH series TrenchFET P channel power MOSFET has drain to source voltage of 150 V. It is used in active clamp circuits in DC/DC power supplies.

Small, thermally enhanced SC-70 package

Ultra low on-resistance

Pb-free

Halogen free

Vishay TrenchFET Type P-Channel MOSFET, 0.52 A, 150 V Enhancement, 6-Pin SOT-363 SI1411DH-T1-GE3

FREE delivery for orders over R 1,500.00

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