Vishay TrenchFET Type P-Channel MOSFET, 4 A, 12 V Enhancement, 6-Pin SOT-363 SI1401EDH-T1-GE3

RS stock no.:: 180-7898
Mfr. Part No.:: SI1401EDH-T1-GE3
Manufacturer:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 4 A, 12 V Enhancement, 6-Pin SOT-363 SI1401EDH-T1-GE3

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Bulk discount available

Subtotal (1 pack of 25 units)*

R 174,675

(exc. VAT)

R 200,875

(inc. VAT)

FREE delivery for orders over R 1,500.00

Last RS stock

Final 2,900 unit(s), ready to ship from another location

Units	Per unit	Per Pack*
25 - 25	R 6.987	R 174.68
50 - 75	R 6.812	R 170.30
100 - 475	R 6.608	R 165.20
500 - 975	R 6.343	R 158.58
1000 +	R 6.09	R 152.25

*price indicative

RS stock no.:: 180-7898
Mfr. Part No.:: SI1401EDH-T1-GE3
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	4A
	Maximum Drain Source Voltage Vds	12V
	Series	TrenchFET
	Package Type	SOT-363
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	34mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	14.1nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.8W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	10 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	2.4 mm
	Height	1.1mm
	Length	2.2mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 4A
	Maximum Drain Source Voltage Vds 12V
	Series TrenchFET
	Package Type SOT-363
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 34mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 14.1nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.8W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 10 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 2.4 mm
	Height 1.1mm
	Length 2.2mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 12V and a maximum gate-source voltage of 10V. It has drain-source resistance of 34mohm at a gate-source voltage of 4.5V. It has a maximum power dissipation of 2.8W and continuous drain current of 4A. The minimum and a maximum driving voltage for this transistor are 1.5V and 4.5V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

• Typical ESD performance 1500V

Applications

• Cellular phone

• DSC

• GPS

• Load switch

• MP3

• PA switch and battery switch for portable devices

• Portable game console

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested