Vishay Siliconix TrenchFET Type N-Channel MOSFET, 12 A, 60 V Enhancement, 6-Pin SC-70-6L SiA106DJ-T1-GE3

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Subtotal (1 pack of 10 units)*

R 110,32

(exc. VAT)

R 126,87

(inc. VAT)

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Temporarily out of stock
  • 3,000 unit(s) shipping from 29 December 2025
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Units
Per unit
Per Pack*
10 - 40R 11.032R 110.32
50 - 90R 10.756R 107.56
100 - 490R 10.433R 104.33
500 - 990R 10.016R 100.16
1000 +R 9.615R 96.15

*price indicative

Packaging Options:
RS stock no.:
178-3901
Mfr. Part No.:
SiA106DJ-T1-GE3
Manufacturer:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

60V

Package Type

SC-70-6L

Series

TrenchFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.0185Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

6.9nC

Maximum Power Dissipation Pd

19W

Maximum Operating Temperature

150°C

Width

1.35 mm

Length

2.2mm

Height

1mm

Standards/Approvals

No

Automotive Standard

No

Exempt

COO (Country of Origin):
CN
TrenchFET® Gen IV power MOSFET

Very low RDS - Qg Figure-of-Merit (FOM)

Tuned for the lowest RDS – Qoss

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