Vishay Siliconix TrenchFET N-Channel MOSFET, 12 A, 60 V Enhancement, 6-Pin SC-70-6L SiA106DJ-T1-GE3
- RS stock no.:
- 178-3901
- Mfr. Part No.:
- SiA106DJ-T1-GE3
- Manufacturer:
- Vishay Siliconix
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 200,59
(exc. VAT)
R 230,68
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 810 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 20.059 | R 200.59 |
| 50 - 90 | R 19.558 | R 195.58 |
| 100 - 490 | R 18.971 | R 189.71 |
| 500 - 990 | R 18.212 | R 182.12 |
| 1000 + | R 17.484 | R 174.84 |
*price indicative
- RS stock no.:
- 178-3901
- Mfr. Part No.:
- SiA106DJ-T1-GE3
- Manufacturer:
- Vishay Siliconix
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SC-70-6L | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.0185Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 19W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.9nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.35mm | |
| Standards/Approvals | No | |
| Length | 2.2mm | |
| Height | 1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SC-70-6L | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.0185Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 19W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.9nC | ||
Maximum Operating Temperature 150°C | ||
Width 1.35mm | ||
Standards/Approvals No | ||
Length 2.2mm | ||
Height 1mm | ||
Automotive Standard No | ||
Exempt
- COO (Country of Origin):
- CN
TrenchFET® Gen IV power MOSFET
Very low RDS - Qg Figure-of-Merit (FOM)
Tuned for the lowest RDS – Qoss
Related links
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