Vishay SI Type N-Channel MOSFET, 1.9 A, 100 V Enhancement, 6-Pin SOT-363 SI1480BDH-T1-GE3

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Subtotal (1 pack of 25 units)*

R 169,325

(exc. VAT)

R 194,725

(inc. VAT)

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  • 6,000 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
25 - 25R 6.773R 169.33
50 - 75R 6.604R 165.10
100 - 225R 6.406R 160.15
250 - 975R 6.149R 153.73
1000 +R 5.903R 147.58

*price indicative

Packaging Options:
RS stock no.:
279-9891
Mfr. Part No.:
SI1480BDH-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-363

Series

SI

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.212Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

6nC

Maximum Power Dissipation Pd

1.7W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Fully lead (Pb)-free device

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