Vishay SI Type N-Channel MOSFET, 1.9 A, 100 V Enhancement, 6-Pin SOT-363 SI1480BDH-T1-GE3
- RS stock no.:
- 279-9891
- Mfr. Part No.:
- SI1480BDH-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 pack of 25 units)*
R 164,675
(exc. VAT)
R 189,375
(inc. VAT)
Add 275 units to get free delivery
In Stock
- 6,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 6.587 | R 164.68 |
| 50 - 75 | R 6.422 | R 160.55 |
| 100 - 225 | R 6.229 | R 155.73 |
| 250 - 975 | R 5.98 | R 149.50 |
| 1000 + | R 5.741 | R 143.53 |
*price indicative
- RS stock no.:
- 279-9891
- Mfr. Part No.:
- SI1480BDH-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-363 | |
| Series | SI | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.212Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.7W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-363 | ||
Series SI | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.212Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.7W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Fully lead (Pb)-free device
Related links
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