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STMicroelectronics MDmesh N-Channel MOSFET Transistor, 20 A, 600 V, 3-Pin I2PAK STI26NM60N

RS stock no.:: 760-9629
Mfr. Part No.:: STI26NM60N
Manufacturer:: STMicroelectronics

STMicroelectronics MDmesh N-Channel MOSFET Transistor, 20 A, 600 V, 3-Pin I2PAK STI26NM60N

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Bulk discount available

Subtotal (1 unit)*

R 99,30

(exc. VAT)

R 114,20

(inc. VAT)

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Units	Per unit
1 - 9	R 99.30
10 - 49	R 95.33
50 - 99	R 91.51
100 - 249	R 87.85
250 +	R 84.34

*price indicative

RS stock no.:: 760-9629
Mfr. Part No.:: STI26NM60N
Manufacturer:: STMicroelectronics

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	STMicroelectronics
	Channel Type	N
	Maximum Continuous Drain Current	20 A
	Maximum Drain Source Voltage	600 V
	Package Type	I2PAK
	Series	MDmesh
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	165 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	140 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-25 V, +25 V
	Width	4.6mm
	Typical Gate Charge @ Vgs	60 nC @ 10 V
	Transistor Material	Si
	Length	10.4mm
	Number of Elements per Chip	1
	Height	10.75mm

	Select all
	Brand STMicroelectronics
	Channel Type N
	Maximum Continuous Drain Current 20 A
	Maximum Drain Source Voltage 600 V
	Package Type I2PAK
	Series MDmesh
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 165 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 140 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -25 V, +25 V
	Width 4.6mm
	Typical Gate Charge @ Vgs 60 nC @ 10 V
	Transistor Material Si
	Length 10.4mm
	Number of Elements per Chip 1
	Height 10.75mm

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