MOSFETs | N-Channel | P-Channel | RS
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    MOSFETs

    MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

    These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

    What are depletion and enhancement modes?

    MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

    How do MOSFETs work?

    The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

    N-Channel vs. P-Channel MOSFETs

    N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

    P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

    18729 Products showing for MOSFETs

    Infineon
    N
    46 A
    250 V
    -
    TO-220AB
    HEXFET
    -
    Through Hole
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    onsemi
    N
    23 A
    600 V
    240 mΩ
    TO-3PN
    QFET
    -
    Through Hole
    3V
    3
    -30 V, +30 V
    Enhancement
    310 W
    -
    Single
    15.8mm
    +150 °C
    1
    Si
    110 nC @ 10 V
    5mm
    Infineon
    N
    33 A
    100 V
    44 mΩ
    TO-220AB
    HEXFET
    4V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    130 W
    -
    Single
    10.54mm
    +175 °C
    1
    Si
    71 nC @ 10 V
    4.69mm
    STMicroelectronics
    N
    80 A
    60 V
    3.5 mΩ
    TO-220
    STripFET F7
    -
    Through Hole
    -
    3
    -20 V, +20 V
    Enhancement
    158 W
    -
    Single
    10.4mm
    +175 °C
    1
    Si
    55 nC @ 10 V
    4.6mm
    onsemi
    N
    235 A
    75 V
    3.2 mΩ
    TO-220
    PowerTrench
    -
    Through Hole
    2.5V
    3
    -20 V, +20 V
    Enhancement
    375 W
    -
    Single
    9.9mm
    +175 °C
    1
    Si
    169 nC @ 10 V
    4.5mm
    Infineon
    N
    9.4 A
    100 A
    -
    D-Pak (TO-252AA)
    HEXFET
    -
    Through Hole
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Infineon
    P
    23 A
    100 V
    117 mΩ
    D2PAK (TO-263)
    HEXFET
    4V
    Surface Mount
    2V
    3
    -20 V, +20 V
    Enhancement
    110 W
    -
    Single
    10.67mm
    +150 °C
    1
    Si
    73 nC @ 10 V
    9.65mm
    Infineon
    N
    30 A
    55 V
    35 mΩ
    TO-220AB
    HEXFET
    2V
    Through Hole
    1V
    3
    -16 V, +16 V
    Enhancement
    68 W
    -
    Single
    10.54mm
    +175 °C
    1
    Si
    25 nC @ 5 V
    4.69mm
    Infineon
    N
    150 A
    100 V
    0.0036 O, 0.0048 O
    SuperSO8 5 x 6
    OptiMOS™ 5
    2.3V
    Surface Mount
    -
    8
    -
    -
    -
    -
    -
    -
    -
    1
    Si
    -
    -
    Toshiba
    N
    263 A
    60 V
    2.2 mΩ
    TO-220SIS
    TK
    4V
    Through Hole
    -
    3
    -20 V, +20 V
    Enhancement
    45 W
    -
    Single
    10mm
    +150 °C
    1
    Si
    140 nC @ 10 V
    4.5mm
    Vishay
    N
    100 A
    25 V
    0.00058 Ω
    PowerPAK SO-8DC
    SiDR220DP
    2.1V
    Surface Mount
    -
    8
    -
    Enhancement
    -
    -
    -
    -
    -
    1
    -
    -
    -
    Vishay
    N
    48 A
    600 V
    0.052 Ω
    TO-247AC
    SiHG052N60EF
    5V
    -
    -
    3
    -
    Enhancement
    -
    -
    -
    -
    -
    1
    -
    -
    -
    STMicroelectronics
    N
    12 A
    500 V
    -
    TO-220FP
    MDmesh
    -
    Through Hole
    -
    3
    -
    Enhancement
    -
    -
    -
    -
    -
    1
    Silicon
    -
    -
    STMicroelectronics
    N
    60 A
    60 V
    16 mΩ
    TO-220
    STripFET II
    4V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    150 W
    -
    Single
    10.4mm
    +175 °C
    1
    Si
    49 nC @ 10 V
    4.6mm
    STMicroelectronics
    N
    3.5 A
    600 V
    -
    DPAK (TO-252)
    STD5N
    -
    Surface Mount
    -
    3
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Vishay
    N
    2.5 A
    60 V
    100 mΩ
    HVMDIP
    -
    -
    Through Hole
    2V
    4
    -20 V, +20 V
    Enhancement
    1.3 W
    -
    Single
    5mm
    +175 °C
    1
    Si
    25 nC @ 10 V
    6.29mm
    onsemi
    N
    12 A
    600 V
    650 mΩ
    TO-220
    UniFET
    -
    Through Hole
    3V
    3
    -30 V, +30 V
    Enhancement
    240 W
    -
    Single
    10.67mm
    +150 °C
    1
    Si
    26 nC @ 10 V
    4.83mm
    onsemi
    P
    12 A
    60 V
    180 mΩ
    DPAK (TO-252)
    -
    4V
    Surface Mount
    -
    3
    -20 V, +20 V
    Enhancement
    55 W
    -
    Single
    6.73mm
    +175 °C
    1
    Si
    15 nC @ 10 V
    6.22mm
    Infineon
    N
    47 A
    55 V
    22 mΩ
    TO-220AB
    HEXFET
    2V
    Through Hole
    1V
    3
    -16 V, +16 V
    Enhancement
    110 W
    -
    Single
    10.54mm
    +175 °C
    1
    Si
    48 nC @ 5 V
    4.69mm
    Infineon
    N
    65 A
    200 V
    24 mΩ
    TO-220AB
    HEXFET
    5V
    Through Hole
    3V
    3
    -30 V, +30 V
    Enhancement
    330 W
    -
    Single
    10.66mm
    +175 °C
    1
    Si
    70 nC @ 10 V
    4.82mm
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