STMicroelectronics MDmesh Type N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-220
- RS stock no.:
- 761-0008
- Mfr. Part No.:
- STP13NM60N
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
Subtotal (1 unit)*
R 83,57
(exc. VAT)
R 96,11
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 29 unit(s) shipping from 19 January 2026
- Plus 2 unit(s) shipping from 19 January 2026
- Plus 647 unit(s) shipping from 26 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | R 83.57 |
| 10 - 49 | R 81.48 |
| 50 - 149 | R 79.04 |
| 150 - 499 | R 75.88 |
| 500 + | R 72.84 |
*price indicative
- RS stock no.:
- 761-0008
- Mfr. Part No.:
- STP13NM60N
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | MDmesh | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 90W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.6 mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Height | 15.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series MDmesh | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 90W | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Width 4.6 mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Height 15.75mm | ||
Automotive Standard No | ||
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 STP13NM60N
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220FP STF13NM60N
- STMicroelectronics MDmesh Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 STF11NM80
- STMicroelectronics MDmesh Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 STP11NM80
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220