Microchip Complementary Pair TC6320 1 P-Channel, N channel-Channel MOSFET Arrays, 2 A, 200 V Enhancement, 8-Pin VDFN

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Subtotal (1 reel of 3300 units)*

R 108 391,80

(exc. VAT)

R 124 650,90

(inc. VAT)

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Units
Per unit
Per Reel*
3300 +R 32.846R 108,391.80

*price indicative

RS stock no.:
598-279
Mfr. Part No.:
TC6320K6-G
Manufacturer:
Microchip
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Brand

Microchip

Product Type

MOSFET Arrays

Channel Type

P-Channel, N channel

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

200V

Package Type

VDFN

Series

TC6320

Mount Type

Surface

Pin Count

8

Channel Mode

Enhancement

Forward Voltage Vf

1.8V

Transistor Configuration

Complementary Pair

Width

0.31 mm

Standards/Approvals

RoHS Certificate of Compliance

Length

0.40mm

Height

1.35mm

Number of Elements per Chip

1

Automotive Standard

No

COO (Country of Origin):
TH
The Microchip High-voltage, low-threshold N-channel and P-channel MOSFETs in 8-lead VDFN and SOIC packages feature integrated gate-to-source resistors and gate-to-source Zener diode clamps, making them ideal for high-voltage pulser applications. This complementary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pair uses an advanced vertical DMOS structure and a proven silicon gate manufacturing process. The combination offers the power handling capabilities of bipolar transistors along with the high input impedance and positive temperature coefficient typical of MOS devices. As with all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown.

Low threshold

Low on resistance

Low input capacitance

Fast switching speeds

Free from secondary breakdown

Low input and output leakage

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