N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB Infineon IRF640NPBF

RS stock no.:: 541-0014
Mfr. Part No.:: IRF640NPBF
Manufacturer:: Infineon

N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB Infineon IRF640NPBF

29 Available in South Africa for same day despatch or collection. Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

344 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Price (Excl VAT) Each

R 20,20

(exc. VAT)

R 23,23

(inc. VAT)

Units	Per unit
1 - 24	R 20,20
25 - 99	R 19,70
100 - 249	R 19,11
250 - 499	R 18,35
500 +	R 17,62

RS stock no.:: 541-0014
Mfr. Part No.:: IRF640NPBF
Manufacturer:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	18 A
Maximum Drain Source Voltage	200 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	150 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	150 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Typical Gate Charge @ Vgs	67 nC @ 10 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	8.77mm

N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB Infineon IRF640NPBF

N-Channel Power MOSFET 150V to 600V, Infineon