STMicroelectronics STP Type N-Channel MOSFET, 7 A, 800 V Enhancement, 3-Pin TO-220 STP80N600K6

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Subtotal (1 pack of 2 units)*

R 103,49

(exc. VAT)

R 119,014

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 51.745R 103.49
10 - 18R 50.45R 100.90
20 +R 48.935R 97.87

*price indicative

Packaging Options:
RS stock no.:
275-1356
Mfr. Part No.:
STP80N600K6
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

800V

Series

STP

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

600mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

10.7nC

Maximum Power Dissipation Pd

86W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

28.9mm

Width

10.4 mm

Standards/Approvals

RoHS

Height

4.6mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics high voltage N-channel power MOSFET is designed using the ultimate MDmesh K6 technology based on super junction technology. The result is the best in class on resistance per area and gate charge for applications requiring superior power density and high efficiency.

Ultra low gate charge

100 percent avalanche tested

Zener protected

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