Infineon SPP18P06P-H Type P-Channel MOSFET, -18.7 A, 60 V Enhancement, 3-Pin PG-TO252-3 SPP18P06PHXKSA1
- RS stock no.:
- 273-7552
- Mfr. Part No.:
- SPP18P06PHXKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 tube of 50 units)*
R 819,70
(exc. VAT)
R 942,65
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 450 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | R 16.394 | R 819.70 |
| 100 + | R 15.984 | R 799.20 |
*price indicative
- RS stock no.:
- 273-7552
- Mfr. Part No.:
- SPP18P06PHXKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -18.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SPP18P06P-H | |
| Package Type | PG-TO252-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.13Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Forward Voltage Vf | 1.33V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 81.1W | |
| Maximum Operating Temperature | 175°C | |
| Length | 40mm | |
| Height | 1.5mm | |
| Standards/Approvals | Qualified according to AEC Q101, Halogen Free according to IEC61249-2-21, RoHS | |
| Width | 40 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -18.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SPP18P06P-H | ||
Package Type PG-TO252-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.13Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Forward Voltage Vf 1.33V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 81.1W | ||
Maximum Operating Temperature 175°C | ||
Length 40mm | ||
Height 1.5mm | ||
Standards/Approvals Qualified according to AEC Q101, Halogen Free according to IEC61249-2-21, RoHS | ||
Width 40 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET is a P channel small signal MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It is a halogen free according to IEC61249 2 21.
RoHS compliant
Avalanche rated
Enhancement mode
Pb free lead finishing
Qualified according to AEC Q101
Related links
- Infineon SPP18P06P-H Type P-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO252-3
- Infineon OptiMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO252-3
- Infineon OptiMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO252-3
- Infineon OptiMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO252-3
- Infineon SPD18P06P G Type P-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO252-3
- Infineon SPD04P10PL G Type P-Channel MOSFET 100 V Enhancement, 3-Pin PG-TO252-3
- Infineon SPD18P06P G Type P-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO252-3 SPD18P06PGBTMA1
- Infineon OptiMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO252-3 IPD900P06NMATMA1