Infineon SPD04P10PL G Type P-Channel MOSFET, -4.2 A, 100 V Enhancement, 3-Pin PG-TO252-3 SPD04P10PLGBTMA1

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Subtotal (1 reel of 2500 units)*

R 14 600,00

(exc. VAT)

R 16 800,00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +R 5.84R 14,600.00

*price indicative

RS stock no.:
273-7550
Mfr. Part No.:
SPD04P10PLGBTMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-4.2A

Maximum Drain Source Voltage Vds

100V

Package Type

PG-TO252-3

Series

SPD04P10PL G

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

850mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

38W

Typical Gate Charge Qg @ Vgs

12nC

Forward Voltage Vf

0.94V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

40mm

Standards/Approvals

AEC Q101, RoHS

Height

1.5mm

Width

40 mm

Automotive Standard

AEC-Q101

The Infineon MOSFET is a P channel power MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It is a qualified according to AEC Q101.

Logic level

RoHS compliant

Enhancement mode

Pb free lead plating

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